A SiC semiconductor is a compound semiconductor composed of silicon (Si) and carbon (C). Compared to conventional silicon semiconductors, it features:
- low on-resistance, so it can carry a large current;
- high breakdown voltage, meaning it can tolerate high voltages;
- high-speed operation, so it can operate at high frequencies; and
- high-temperature tolerance, even at 400°C.
Owing to benefits like these, SiC semiconductors are attracting attention as the next generation of power devices for handling high power loads.
By choosing Fukushima SiC’s semiconductors, you gain access to proven expertise in circuit design and integration with SiC devices that can handle high voltages and high currents from 10 kV to hundreds of kV and from 10 A to 1,000 A.
SiC semiconductors have outstanding characteristics, but taking full advantage of them requires the right integration and circuit design technologies. We have commercialized circuit design technology that uses matrix-switch circuits to deliver high output and high stability. Furthermore, we have the technology and expertise to mount SiC chips directly onto ceramic substrates.
The table below shows a comparison between conventional SiC switching modules and our product. Our circuit design and integration technology achieves a current 30 times higher and switching speed 100 times faster than conventional SiC switching modules.
|Maximum Pulse Current||Average Current||Pulse Frequency||DC-mode|
|Our Product||1,000 A||＞60 A||＞100 kHz||Max 60 A|
|Conventional||80 A||＜several A||＜1 kHz||1 or 2 A|